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BST60

丝印:BS1;Package:SOT89;PNP Darlington transistors

FEATURES •High current (max. 0.5 A) •Low voltage (max. 80 V) •Integrated diode and resistor. APPLICATIONS •Industrial switching applications such as: –Print hammer –Solenoid –Relay and lamp driving. DESCRIPTION PNP Darlington transistor in a SOT89 plastic package. NPN complements: BS

文件:329.14 Kbytes 页数:9 Pages

NEXPERIA

安世

BS107A

丝印:BS107A;Package:TO-92;Small Signal MOSFET 250 mA, 200 V, N−Channel TO−92

Features • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device*

文件:61.72 Kbytes 页数:4 Pages

ONSEMI

安森美半导体

BS170P

丝印:BS170P;Package:E-Line;60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET

Features BVDSS > 60V RDS(ON) ≤ 5Ω @ VGS= 10V ID = 270mA Maximum Continuous Drain Current Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

文件:626.5 Kbytes 页数:6 Pages

DIODES

美台半导体

BS170PSTZ

丝印:BS170P;Package:E-Line;60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET

Features BVDSS > 60V RDS(ON) ≤ 5Ω @ VGS= 10V ID = 270mA Maximum Continuous Drain Current Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

文件:626.5 Kbytes 页数:6 Pages

DIODES

美台半导体

BS107A

丝印:BS107A;Package:TO-92;Small Signal MOSFET 250 mA, 200 V, N−Channel TO−92

Features • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device*

文件:61.72 Kbytes 页数:4 Pages

ONSEMI

安森美半导体

BS1001-7R

100 Watt DC-DC Converters

Wide input voltage ranges from 8...385 V DC 1 or 2 isolated outputs up to 48 VDC 4 kV AC I/O electric strengh test voltage • Rugged electrical and mechanical design • Fully isolated outputs • Operating ambient temperature range –40...71°C with convection cooling

文件:147.39 Kbytes 页数:4 Pages

POWER-ONE

BS107

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

SIPMOS® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V

文件:77.84 Kbytes 页数:7 Pages

SIEMENS

西门子

BS107

N-Channel Enhancement-Mode MOS Transistors

文件:109.43 Kbytes 页数:4 Pages

Temic

BS107

TMOS Switching(N-Channel-Enhancement)

TMOS Switching N–Channel — Enhancement

文件:76.19 Kbytes 页数:4 Pages

Motorola

摩托罗拉

BS107

Small Signal MOSFET 250 mA, 200 V, N−Channel TO−92

Features • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device*

文件:61.72 Kbytes 页数:4 Pages

ONSEMI

安森美半导体

晶体管资料

  • 型号:

    BST60

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-P+Darl+Di

  • 性质:

    表面帖装型 (SMD)

  • 封装形式:

    贴片封装

  • 极限工作电压:

    60V

  • 最大电流允许值:

    1.5A

  • 最大工作频率:

    350MHZ

  • 引脚数:

    3

  • 可代换的型号:

    2SB1048,2SD1470,2SD1472,2SD1511,

  • 最大耗散功率:

  • 放大倍数:

    β>2000

  • 图片代号:

    H-100

  • vtest:

    60

  • htest:

    350000000

  • atest:

    1.5

  • wtest:

    0

详细参数

  • 型号:

    BS1

  • 功能描述:

    达林顿晶体管 TRANS DARLINGTON TAPE-7

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶体管极性:

    NPN 集电极—发射极最大电压

  • VCEO:

    50 V 发射极 - 基极电压

  • VEBO:

    集电极—基极电压

  • 最大直流电集电极电流:

    0.5 A

  • 最大工作温度:

    + 150 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOIC-18

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
NEXPERIA/安世
25+
SOT-89
20300
NEXPERIA/安世原装特价BST60即刻询购立享优惠#长期有货
询价
25+
10
公司现货库存
询价
恩XP
SOT89
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
NEXPERIA/安世
20+
SOT-89
120000
原装正品 可含税交易
询价
ROHM/罗姆
2402+
DIP
17110
优势代理渠道,原装现货,可全系列订货
询价
恩XP
2025+
SOT-89
5000
原装进口价格优 请找坤融电子!
询价
ROHM
13+
DIP
18348
原装分销
询价
PHI
05+
原厂原装
50051
只做全新原装真实现货供应
询价
ROHM
24+
DIP
4500
询价
Nexperia
24+
NA
3000
进口原装正品优势供应
询价
更多BS1供应商 更新时间2025-12-22 18:40:00