丝印：BSP149；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES Vos = 200V Ib=10A @Ves = 10V Rosion) £1.35Q @Ves = 10V SOT-223 package.

文件：3.04397 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：BSP149；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES Vos = 200V Ib=10A @Ves = 10V Rosion) £1.35Q @Ves = 10V SOT-223 package.

文件：3.04397 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

● VDS 200 V ● ID 0.48 A ● RDS(on) 3.5 Ω ● N channel ● Depletion mode ● High dynamic resistance ● Available grouped in VGS(th)

文件：328.62 Kbytes 页数：7 Pages

SIEMENS

西门子

SIPMOS Small-Signal-Transistor

Features • N-channel • Depletion mode • dv /dt rated • Available with VGS(th) indicator on reel • Pb-free lead plating; RoHS compliant

文件：206.19 Kbytes 页数：9 Pages

Infineon

英飞凌

SIPMOS Small-Signal-Transistor

文件：226.93 Kbytes 页数：9 Pages

Infineon

英飞凌

SIPMOS Small-Signal-Transistor

文件：226.93 Kbytes 页数：9 Pages

Infineon

英飞凌