丝印：BSP295；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

文件：1.92454 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：BSP295；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

文件：1.92454 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

SIPMOS® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V

文件：180.33 Kbytes 页数：9 Pages

SIEMENS

西门子

SIPMOS Small-Signal Transistor

Feature • N-Channel • Enhancement mode • dv/dt rate • Pb-free lead plating; RoHS complian

文件：290.88 Kbytes 页数：8 Pages

Infineon

英飞凌

SIPMOS??Small-Signal-Transistor

Feature • N-Channel • Enhancement mode • dv/dt rate • Pb-free lead plating; RoHS complian

文件：448.13 Kbytes 页数：8 Pages

Infineon

英飞凌

SIPMOS Small-Signal-Transistor

文件：714.12 Kbytes 页数：8 Pages

Infineon

英飞凌

SIPMOS Small-Signal-Transistor

文件：714.12 Kbytes 页数：8 Pages

Infineon

英飞凌