丝印：BSP50；Package：SOT223；NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors • High collector current • Low collector-emitter saturation voltage • Complementary types: BSP60 - BSP62 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

文件：570.31 Kbytes 页数：8 Pages

Infineon

英飞凌

丝印：BSP50；Package：SOT223；NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors • High collector current • Low collector-emitter saturation voltage • Complementary types: BSP60 - BSP62 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

文件：570.31 Kbytes 页数：8 Pages

Infineon

英飞凌

NPN Darlington Transistor

NPN Darlington Transistor • This device is designed for applications requiring extremly high current gain at collector currents to 500mA. • Sourced from process 03.

文件：146.94 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

NPN Darlington transistor

1. General description NPN Darlington transistor in an SOT223 plastic package. PNP complement: BSP60 2. Features and benefits • High current of 1 A • Low voltage of 45 V • Integrated diode and resistor • AEC-Q101 qualified 3. Applications • Industrial high gain amplification

文件：196.55 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Silicon Darling Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -VCEO= 45V(Min) · Collector-Emitter Saturation Voltage -VCE(sat)=1.3V(Max) @IC= 0.5A APPLICATIONS · Designed for use in automotive ignition, switching and motor control applications

文件：300.36 Kbytes 页数：3 Pages

ISC

无锡固电

NPN Darlington transistors

DESCRIPTION NPN Darlington transistor in a SOT223 plastic package. PNP complements: BSP60, BSP61 and BSP62. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Industrial high gain amplification.

文件：47.65 Kbytes 页数：8 Pages

PHI

飞利浦

NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)

NPN Silicon Darlington Transistors ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BSP 60 … BSP 62 (PNP)

文件：152.87 Kbytes 页数：5 Pages

SIEMENS

西门子

NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors • High collector current • Low collector-emitter saturation voltage • Complementary types: BSP60 - BSP62 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

文件：92.5 Kbytes 页数：5 Pages

Infineon

英飞凌

NPN Darlington Transistor

NPN Darlington Transistor • This device is designed for applications requiring extremly high current gain at collector currents to 500mA. • Sourced from process 03.

文件：41 Kbytes 页数：3 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN Darlington transistors

DESCRIPTION NPN Darlington transistor in a SOT223 plastic package. PNP complements: BSP60, BSP61 and BSP62. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Industrial high gain amplification.

文件：126.5 Kbytes 页数：7 Pages

恩XP