丝印：BSP122；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES Vos = 200V = 10A @Vos = 10v. B Roson $1350 @Vos= 10V 507-223 package. |

文件：2.8615 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：BSP122；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES Vos = 200V = 10A @Vos = 10v. B Roson $1350 @Vos= 10V 507-223 package. |

文件：2.8615 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 package and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-spe

文件：58.56 Kbytes 页数：8 Pages

PHI

飞利浦

N-Channel 200 V (D-S) MOSFET

FEATURES • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements

文件：1.03072 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel enhancement mode vertical D-MOS transistor

FEATURES · Direct interface to C-MOS, TTL, etc. · High-speed switching · No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 package and intended for use as a line current interruptor in telephone sets and for applications in relay, high-

文件：174.83 Kbytes 页数：9 Pages

NEXPERIA

安世