丝印：BS1；Package：SOT89；PNP Darlington transistors

FEATURES •High current (max. 0.5 A) •Low voltage (max. 80 V) •Integrated diode and resistor. APPLICATIONS •Industrial switching applications such as: –Print hammer –Solenoid –Relay and lamp driving. DESCRIPTION PNP Darlington transistor in a SOT89 plastic package. NPN complements: BS

文件：329.14 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BS107A；Package：TO-92；Small Signal MOSFET 250 mA, 200 V, N−Channel TO−92

Features • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device*

文件：61.72 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

丝印：BS170P；Package：E-Line；60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET

Features BVDSS > 60V RDS(ON) ≤ 5Ω @ VGS= 10V ID = 270mA Maximum Continuous Drain Current Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

文件：626.5 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：BS170P；Package：E-Line；60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET

Features BVDSS > 60V RDS(ON) ≤ 5Ω @ VGS= 10V ID = 270mA Maximum Continuous Drain Current Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

文件：626.5 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：BS107A；Package：TO-92；Small Signal MOSFET 250 mA, 200 V, N−Channel TO−92

Features • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device*

文件：61.72 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

100 Watt DC-DC Converters

Wide input voltage ranges from 8...385 V DC 1 or 2 isolated outputs up to 48 VDC 4 kV AC I/O electric strengh test voltage • Rugged electrical and mechanical design • Fully isolated outputs • Operating ambient temperature range –40...71°C with convection cooling

文件：147.39 Kbytes 页数：4 Pages

POWER-ONE

TMOS Switching(N-Channel-Enhancement)

TMOS Switching N–Channel — Enhancement

文件：76.19 Kbytes 页数：4 Pages

Motorola

摩托罗拉

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

文件：65.099 Kbytes 页数：12 Pages

PHI

飞利浦

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

SIPMOS® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V

文件：77.84 Kbytes 页数：7 Pages

SIEMENS

西门子

N-CHANNEL ENHANCEMENT MODE TRANSISTOR

Features • High Breakdown Voltage • High Input Impedance • Fast Switching Speed • Specially Suited for Telephone Subsets

文件：61.91 Kbytes 页数：2 Pages

DIODES

美台半导体