Power LDMOS transistor

General description 300 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

文件：1.75993 Mbytes 页数：14 Pages

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Power LDMOS transistor

General description 400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2200 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

文件：1.75586 Mbytes 页数：16 Pages

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Power LDMOS transistor

Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output capacitance for improved performance in Doherty applications  Designed for low memory effects providing excellent digital pre-distortion capability 

文件：1.27814 Mbytes 页数：14 Pages

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Power LDMOS transistor

General description 550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2100 MHz to 2200 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

文件：1.59758 Mbytes 页数：15 Pages

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Power LDMOS transistor

General description 570 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2180 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

文件：1.44975 Mbytes 页数：15 Pages

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Power LDMOS transistor

General description 600 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

文件：1.57513 Mbytes 页数：14 Pages

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Power LDMOS transistor

General description 600 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

文件：1.34536 Mbytes 页数：15 Pages

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Power LDMOS transistor

General description 600 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

文件：1.34553 Mbytes 页数：15 Pages

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Power LDMOS transistor

General description 320 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Decoupling l

文件：1.44523 Mbytes 页数：13 Pages

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Power LDMOS transistor

General description 400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

文件：1.34977 Mbytes 页数：15 Pages

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