Power LDMOS transistor

General description 60 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 2200 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Asymmetric desi

文件：1.73904 Mbytes 页数：15 Pages

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Power LDMOS transistor

General description 160 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2200 MHz. Features and benefits Excellent ruggedness Excellent video-bandwidth enabling full band operation High efficiency Low thermal resistance providing excellent thermal stabi

文件：1.60016 Mbytes 页数：16 Pages

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Power LDMOS transistor

General description 380 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Decoupling l

文件：1.67584 Mbytes 页数：14 Pages

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Power LDMOS transistor

General description 350 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 617 MHz to 960 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output cap

文件：1.89778 Mbytes 页数：18 Pages

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Power LDMOS transistor

General description 500 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 617 MHz to 960 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output cap

文件：1.89533 Mbytes 页数：17 Pages

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Power LDMOS transistor

General description 500 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 617 MHz to 960 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output cap

文件：1.25959 Mbytes 页数：13 Pages

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Power LDMOS transistor

General description 600 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 616 MHz to 960 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output cap

文件：1.7656 Mbytes 页数：16 Pages

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Power LDMOS transistor

General description 600 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 616 MHz to 960 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output cap

文件：1.1615 Mbytes 页数：13 Pages

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Power LDMOS transistor

General description 60 W LDMOS packaged symmetric power transistor for base station applications at frequencies from 400 MHz to 1000 MHz. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designe

文件：1.55818 Mbytes 页数：14 Pages

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BL compact™ fieldbus station for CANopen 2 Analog Outputs for Voltage

■ On-machine Compact fieldbus I/O block ■ CANopen slave ■ 10, 20, 50, 125, 250, 500, 800, or 1000 kbps ■ Two 5-pole M12 connectors for fieldbus connection ■ 2 rotary switches for node address ■ IP67, IP69K ■ M12 I/O connectors ■ LEDs indicating status and diagnostics ■ Electronics galvan

文件：376.82 Kbytes 页数：4 Pages

TURCKTurck, Inc.

图尔克德国图尔克集团公司