Power LDMOS transistor

General description 550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2620 MHz to 2690 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

文件：1.33778 Mbytes 页数：14 Pages

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Power LDMOS transistor

General description 250 W LDMOS-based power transistor suitable for use in a variety of commercial and consumer cooking, industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz. The BLC2425M10LS250 is designed for high-power CW applications and is assembled in

文件：1.39539 Mbytes 页数：11 Pages

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Power LDMOS transistor

General description 500 W LDMOS based power transistor suitable for use in a variety of commercial and consumer cooking, industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz. The BLC2425M10LS500P is designed for high-power CW applications and is assembled i

文件：1.10088 Mbytes 页数：10 Pages

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Power LDMOS transistor

General description 300 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLC2425M8LS300P is designed for high-power CW applications and is assembled in a high performance plastic package. Features and benefits 

文件：1.07055 Mbytes 页数：12 Pages

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Power LDMOS transistor

General description 250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLC2425M9LS250 is designed for high-power CW applications and is assembled in a high performance plastic package. Features and benefits  H

文件：1.89299 Mbytes 页数：11 Pages

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UHF power LDMOS transistor

General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 32 V and an IDq of 1200 mA: ◆ Average output power = 32 W

文件：54.07 Kbytes 页数：9 Pages

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UHF power LDMOS transistor

General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: ◆ Average output power = 40 W

文件：54.02 Kbytes 页数：9 Pages

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PHI

UHF power LDMOS transistor

General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 32 V and an IDq of 1200 mA: ◆ Average output power = 32 W

文件：54.07 Kbytes 页数：9 Pages

PHI

PHI

UHF power LDMOS transistor

General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: ◆ Average output power = 40 W

文件：54.02 Kbytes 页数：9 Pages

PHI

PHI

UHF power LDMOS transistor

General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 950 mA: ◆ Output power = 25 W (AV)

文件：52.29 Kbytes 页数：9 Pages

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