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BLC10G18XS-551AV

Power LDMOS transistor

Generaldescription 550WLDMOSpackagedasymmetricDohertypowertransistorforbasestation applicationsatfrequenciesfrom1805MHzto1880MHz. Featuresandbenefits Excellentruggedness Highefficiency Lowthermalresistanceprovidingexcellentthermalstability Loweroutputc

AmpleonAmpleon USA Inc.

安谱隆

BLC10G18XS-551AVT

Power LDMOS transistor

Generaldescription 550WLDMOSpackagedasymmetricDohertypowertransistorforbasestation applicationsatfrequenciesfrom1805MHzto1880MHz. Featuresandbenefits Excellentruggedness Highefficiency Lowthermalresistanceprovidingexcellentthermalstability Loweroutputc

AmpleonAmpleon USA Inc.

安谱隆

BLC10G18XS-552AVT

Power LDMOS transistor

Generaldescription 550WLDMOSpackagedasymmetricDohertypowertransistorforbasestation applicationsatfrequenciesfrom1805MHzto1880MHz. Featuresandbenefits Excellentruggedness Highefficiency Lowthermalresistanceprovidingexcellentthermalstability Loweroutputc

AmpleonAmpleon USA Inc.

安谱隆

BLC10G18XS-600AVT

Power LDMOS transistor

Generaldescription 600WLDMOSpackagedasymmetricDohertypowertransistorforbasestation applicationsatfrequenciesfrom1805MHzto1880MHz. Featuresandbenefits Excellentruggedness Highefficiency Lowthermalresistanceprovidingexcellentthermalstability Loweroutputc

AmpleonAmpleon USA Inc.

安谱隆

BLC10G18XS-602AVT

Power LDMOS transistor

Generaldescription 600WLDMOSpackagedasymmetricDohertypowertransistorforbasestation applicationsatfrequenciesfrom1805MHzto1880MHz. Featuresandbenefits Excellentruggedness Highefficiency Lowthermalresistanceprovidingexcellentthermalstability Loweroutputc

AmpleonAmpleon USA Inc.

安谱隆

BLC10G19XS-551AV

Power LDMOS transistor

Generaldescription 550WLDMOSpackagedasymmetricDohertypowertransistorforbasestation applicationsatfrequenciesfrom1930MHzto2000MHz. Featuresandbenefits Excellentruggedness Highefficiency Lowthermalresistanceprovidingexcellentthermalstability Loweroutputc

AmpleonAmpleon USA Inc.

安谱隆

BLC10G19XS-600AVT

Power LDMOS transistor

Generaldescription 600WLDMOSpackagedasymmetricDohertypowertransistorforbasestation applicationsatfrequenciesfrom1930MHzto1995MHz. Featuresandbenefits Excellentruggedness Highefficiency Lowthermalresistanceprovidingexcellentthermalstability Loweroutputc

AmpleonAmpleon USA Inc.

安谱隆

BLC10G19XS-601AVT

Power LDMOS transistor

Generaldescription 600WLDMOSpackagedasymmetricDohertypowertransistorforbasestation applicationsatfrequenciesfrom1930MHzto1995MHz. Featuresandbenefits Excellentruggedness Highefficiency Lowthermalresistanceprovidingexcellentthermalstability Loweroutputc

AmpleonAmpleon USA Inc.

安谱隆

BLC10G22LS-240PVT

Power LDMOS transistor

Generaldescription 240WLDMOSpowertransistorwithenhancedvideobandwidthforbasestation applicationsatfrequenciesfrom2110MHzto2200MHz. Featuresandbenefits Excellentruggedness Excellentvideobandwidthenablingfullbandoperation Highefficiency Lowthermalresist

AmpleonAmpleon USA Inc.

安谱隆

BLC10G22XS-301AVT

Power LDMOS transistor

Generaldescription 300WLDMOSpackagedasymmetricDohertypowertransistorforbasestation applicationsatfrequenciesfrom2110MHzto2170MHz. Featuresandbenefits Excellentruggedness Highefficiency Lowthermalresistanceprovidingexcellentthermalstability Loweroutputc

AmpleonAmpleon USA Inc.

安谱隆

详细参数

  • 型号:

    BLC

  • 制造商:

    Fuji Electric

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52
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19898
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17+
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6200
100%原装正品现货
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23+
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1001
优势库存
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NXP
2016+
SMD
3900
只做原装,假一罚十,公司可开17%增值税发票!
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NXP
24+
SMD
5000
只做原装公司现货
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SOT-502B
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
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BELLING
23+
NA
19960
只做进口原装,终端工厂免费送样
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NXP
23+
NA
76
专业电子元器件供应链正迈科技特价代理QQ1304306553
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更多BLC供应商 更新时间2025-5-21 16:30:00