Power LDMOS transistor

General description 550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

文件：1.61837 Mbytes 页数：16 Pages

Ampleon

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Power LDMOS transistor

General description 550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

文件：1.2212 Mbytes 页数：14 Pages

Ampleon

安谱隆

Power LDMOS transistor

General description 550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

文件：1.48818 Mbytes 页数：14 Pages

Ampleon

安谱隆

Power LDMOS transistor

General description 550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

文件：1.22551 Mbytes 页数：13 Pages

Ampleon

安谱隆

Power LDMOS transistor

General description 600 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

文件：1.4216 Mbytes 页数：15 Pages

Ampleon

安谱隆

Power LDMOS transistor

General description 600 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

文件：1.58513 Mbytes 页数：16 Pages

Ampleon

安谱隆

Power LDMOS transistor

General description 550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1930 MHz to 2000 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

文件：1.28005 Mbytes 页数：14 Pages

Ampleon

安谱隆

Power LDMOS transistor

General description 600 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1930 MHz to 1995 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

文件：1.52829 Mbytes 页数：16 Pages

Ampleon

安谱隆

Power LDMOS transistor

General description 600 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1930 MHz to 1995 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

文件：1.45258 Mbytes 页数：16 Pages

Ampleon

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Power LDMOS transistor

General description 240 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 2110 MHz to 2200 MHz. Features and benefits  Excellent ruggedness  Excellent video bandwidth enabling full band operation  High efficiency  Low thermal resist

文件：1.64433 Mbytes 页数：17 Pages

Ampleon

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