Power LDMOS transistor

General description 550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

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Ampleon

安谱隆

Power LDMOS transistor

550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. • Excellent ruggedness\n• Low thermal resistance providing excellent thermal stability\n• Designed for low memory effects providing excellent digital pre-distortion capability\n• Integrated ESD protection\n• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS);

Ampleon

安谱隆

Package：SOT-1258-4；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：BLC10G18XS-550AVT/SOT1258/REEL

Ampleon USA Inc.

Package：SOT-1258-4；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：BLC10G18XS-550AVT/SOT1258/TRAY

Ampleon USA Inc.