BLC10G18XS-602AVT

Power LDMOS transistor

Generaldescription 600WLDMOSpackagedasymmetricDohertypowertransistorforbasestation applicationsatfrequenciesfrom1805MHzto1880MHz. Featuresandbenefits Excellentruggedness Highefficiency Lowthermalresistanceprovidingexcellentthermalstability Loweroutputc

BLC10G18XS-602AVT

Power LDMOS transistor; • Excellent ruggedness\n• High efficiency\n• Low thermal resistance providing excellent thermal stability\n• Lower output capacitance for improved performance in Doherty applications\n• Designed for low memory effects providing excellent digital pre-distortion capability\n• Internally matched for ease of use\n• Integrated ESD protection\n• For RoHS compliance see the product details on the Ampleon website\n;

600 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.\n\n

BLC10G18XS-602AVTZ

Package：SOT-1258-4；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：BLC10G18XS-602AVT/SOT1258/TRAYDP