General description

550 W LDMOS packaged asymmetric Doherty power transistor for base station

applications at frequencies from 1930 MHz to 2000 MHz.

Features and benefits

 Excellent ruggedness

 High efficiency

 Low thermal resistance providing excellent thermal stability

 Lower output capacitance for improved performance in Doherty applications

 Designed for low memory effects providing excellent digital pre-distortion capability

 Internally matched for ease of use

 Integrated ESD protection

 For RoHS compliance see the product details on the Ampleon website

Applications

 RF power amplifiers for base stations and multi carrier applications in the 1930 MHz to

2000 MHz frequency range

BLC10G19XS-551AV属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。安谱隆半导体（合肥）有限公司制造生产的BLC10G19XS-551AV晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。