Power LDMOS transistor

General description 300 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLC2425M8LS300P is designed for high-power CW applications and is assembled in a high performance plastic package. Features and benefits 

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Ampleon

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Power LDMOS transistor

文件：184.76 Kbytes 页数：12 Pages

PHI

飞利浦

Power LDMOS transistor

300 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications atfrequencies from 2400 MHz to 2500 MHz.\n\nThe BLC2425M8LS300P is designed for high-power CW applications and is assembled in a highperformance plastic package. High efficiency\nEasy power control\nExcellent ruggedness\nExcellent thermal stability\nIntegrated ESD protection\nDesigned for broadband operation (2400 MHz to 2500 MHz)\nInternally matched\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS);

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Package：SOT1250-1；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 17DB SOT12501

Ampleon

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Package：SOT1250-1；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 17DB SOT12501

Ampleon

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