BLC2425M8LS300P数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

300 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications atfrequencies from 2400 MHz to 2500 MHz.

The BLC2425M8LS300P is designed for high-power CW applications and is assembled in a highperformance plastic package.

特性 Features

High efficiency
Easy power control
Excellent ruggedness
Excellent thermal stability
Integrated ESD protection
Designed for broadband operation (2400 MHz to 2500 MHz)
Internally matched
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)

应用 Application

RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequencyrange such as ISM applications and heating

简介

BLC2425M8LS300P属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLC2425M8LS300P晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。