BLC9G21LS-60AV分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

BLC9G21LS-60AV属于分立半导体产品的晶体管-FETMOSFET-射频。由安谱隆制造生产的BLC9G21LS-60AV晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

General description

60 W LDMOS packaged asymmetric Doherty power transistor for base station

applications at frequencies from 1805 MHz to 2200 MHz.

Features and benefits

 Excellent ruggedness

 High efficiency

 Low thermal resistance providing excellent thermal stability

 Asymmetric design to achieve optimum efficiency across the band

 Lower output capacitance for improved performance in Doherty applications

 Designed for low memory effects providing excellent digital pre-distortion

 Internally matched for ease of use

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

 RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to

2200 MHz frequency range