Power LDMOS transistor

General description 60 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 2200 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Asymmetric desi

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Power LDMOS transistor

60 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 2200 MHz. • Excellent ruggedness\n• Low thermal resistance providing excellent thermal stability\n• Lower output capacitance for improved performance in Doherty applications\n• Internally matched for ease of use\n• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS);

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Package：SOT-1275-1；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：BLC9G21LS-60AV/SOT1275/REELDP

Ampleon

安谱隆

Package：SOT-1275-1；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：BLC9G21LS-60AV/SOT1275/TRAYDP

Ampleon

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