Power LDMOS transistor

General description 320 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Decoupling l

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Power LDMOS transistor

320 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. • Excellent ruggedness\n• High efficiency\n• Low thermal resistance providing excellent thermal stability\n• Decoupling leads to enable improved video bandwidth\n• Lower output capacitance for improved performance in Doherty applications\n• Designed for low memory effects providing excellent pre-dis;

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BLC10G27LS-320AV/SOT1258/TRAYD

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Package：SOT1258-1；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：BLC10G27LS-320AV/SOT1258/REELD

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Package：SOT1258-1；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：BLC10G27LS-320AV/SOT1258/TRAYD

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