Power LDMOS transistor

600 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. • Excellent ruggedness\n• High efficiency\n• Low thermal resistance providing excellent thermal stability\n• Lower output capacitance for improved performance in Doherty applications\n• Designed for low memory effects providing excellent digital pre-distortion capability\n• Internally matched for ea;

Ampleon

安谱隆

Power LDMOS transistor

General description 600 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

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Ampleon

安谱隆

Package：SOT-1258-4；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：BLC10G22XS-602AVT/SOT1258/TRAYDP

Ampleon USA Inc.

TO-252

SI

上传：深圳市汇创佳电子科技有限公司

SOT23-5

MICRONE/微盟

上传：深圳广友电子有限公司