Power LDMOS transistor

550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2100 MHz to 2200 MHz. • Excellent ruggedness\n• Low thermal resistance providing excellent thermal stability\n• Designed for low memory effects providing excellent digital pre-distortion capability\n• Integrated ESD protection\n• For RoHS compliance see the product details on the Ampleon website;

Ampleon

安谱隆

Power LDMOS transistor

General description 550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2100 MHz to 2200 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

文件：1.59758 Mbytes 页数：15 Pages

Ampleon

安谱隆

Package：SOT-1258-4；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：BLC10G22XS-551AVT/SOT1258/TRAYDP

Ampleon

安谱隆

SI
TO-252

SI

上传：深圳市汇创佳电子科技有限公司

MICRONE/微盟
SOT23-5

MICRONE/微盟

上传：深圳广友电子有限公司