Power LDMOS transistor

600 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. • Excellent ruggedness\n• High efficiency\n• Low thermal resistance providing excellent thermal stability\n• Lower output capacitance for improved performance in Doherty applications\n• Designed for low memory effects and minimum IDq drift providing excellent digital pre-distortion capability\n• Int;

Ampleon

安谱隆

Power LDMOS transistor

General description 600 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

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Ampleon

安谱隆

Package：SOT-1258-4；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：BLC10G22XS-603AVTY/SOT1258/REEL

Ampleon USA Inc.

TO-252

SI

上传：深圳市汇创佳电子科技有限公司

SOT23-5

MICRONE/微盟

上传：深圳广友电子有限公司