Power LDMOS transistor

300 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. • Excellent ruggedness\n• High efficiency\n• Low thermal resistance providing excellent thermal stability\n• Lower output capacitance for improved performance in Doherty applications\n• Designed for low memory effects providing excellent digital pre-distortion capability\n• Internally matched for ea;

Ampleon

安谱隆

Power LDMOS transistor

General description 300 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

文件：1.75993 Mbytes 页数：14 Pages

Ampleon

安谱隆

Package：SOT-1275-1；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：BLC10G22XS-301AVT/SOT1275/TRAYDP

Ampleon USA Inc.

TO-252

SI

上传：深圳市汇创佳电子科技有限公司

SOT23-5

MICRONE/微盟

上传：深圳广友电子有限公司