丝印：P1；Package：SOT-343R；UHF power transistor

DESCRIPTION NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • High power gain • High efficiency • 1.9 GHz operating area • Linear and non-linear operation. APP

文件：116.31 Kbytes 页数：12 Pages

PHI

PHI

丝印：P1；Package：SOT-343R；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)

NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • fT = 5.5 GHz

文件：48.73 Kbytes 页数：6 Pages

SIEMENS

西门子

NPN Silicon RF Transistor

NPN Silicon RF Transistor ● For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA ● Power amplifiers for DECT and PCN systems ● Integrated emitter ballast resistor ● fT = 5.5 GHz

文件：99.65 Kbytes 页数：6 Pages

INFINEON

英飞凌

NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

文件：289.38 Kbytes 页数：12 Pages

恩XP

NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

文件：100.99 Kbytes 页数：12 Pages

PHI

PHI

丝印：-MU；Package：SOT-143B；NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

文件：100.99 Kbytes 页数：12 Pages

PHI

PHI

丝印：-MU；Package：SOT-143B；NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

文件：289.38 Kbytes 页数：12 Pages

恩XP

NPN 5 GHz wideband transistor

FEATURES · Low current consumption (100 mA to 1 mA) · Low noise figure · Gold metallization ensures excellent reliability. APPLICATIONS · RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz. DESCRIPTION NPN silicon wideband transi

文件：288.83 Kbytes 页数：12 Pages

恩XP

NPN 5 GHz wideband transistor

FEATURES · Low current consumption (100 mA to 1 mA) · Low noise figure · Gold metallization ensures excellent reliability. APPLICATIONS · RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz. DESCRIPTION NPN silicon wideband transi

文件：288.83 Kbytes 页数：12 Pages

恩XP