丝印：P1；Package：SOT-343R；UHF power transistor

DESCRIPTION NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • High power gain • High efficiency • 1.9 GHz operating area • Linear and non-linear operation. APP

文件：116.31 Kbytes 页数：12 Pages

PHI

PHI

丝印：P1；Package：SOT-343R；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

UHF power transistor

文件：234.47 Kbytes 页数：11 Pages

PHI

PHI

UHF power transistor

文件：94.72 Kbytes 页数：12 Pages

JMNIC

锦美电子

UHF power transistor

文件：94.72 Kbytes 页数：12 Pages

JMNIC

锦美电子

UHF功率晶体管

NPN双多晶硅双极功率晶体管，带埋层，用于低电压中功率应用，采用塑料4引脚双发射极SOT343R封装。 1.9 GHz工作区域\n高效率\n高功率增益\n线性和非线性操作;

恩XP