丝印：A7*；Package：SOT-343R；NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件：75.97 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：A7；Package：SOT343R；NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability Applications  Intended for Radio Frequency (RF) fro

文件：168.74 Kbytes 页数：13 Pages

恩XP

NPN 14 GHz wideband transistor

恩XP

恩智浦

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件：75.97 Kbytes 页数：12 Pages

PHI

飞利浦