NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件：75.97 Kbytes 页数：12 Pages

PHI

飞利浦

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability Applications  Intended for Radio Frequency (RF) fro

文件：168.74 Kbytes 页数：13 Pages

恩XP

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件：75.97 Kbytes 页数：12 Pages

PHI

飞利浦

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件：73.69 Kbytes 页数：12 Pages

PHI

飞利浦