BFG310WSLASHXR中文资料恩XP数据手册PDF规格书

General description

NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.

特性 Features

 High power gain

 Low noise figure

 High transition frequency

 Gold metallization ensures excellent reliability

Applications

 Intended for Radio Frequency (RF) front end applications in the GHz range, such as:

 analog and digital cellular telephones

 cordless telephones (Cordless Telephone (CT), Personal Communication

Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)

 radar detectors

 pagers

 Satellite Antenna TeleVision (SATV) tuners