NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件：75.97 Kbytes 页数：12 Pages

PHI

PHI

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件：73.69 Kbytes 页数：12 Pages

PHI

PHI

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

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Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Ω-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P-1dB at 1.0 GHz • 3 dB-bandwidth: DC to 2.4 GHz

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SIEMENS

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