首页 >BFG31>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

BFG31

PNP 5 GHz wideband transistor

DESCRIPTION PNP planar epitaxial transistor mounted in a plastic SOT223 envelope. It is intended for wideband amplifier applications. NPN complement is the BFG97. FEATURES • High output voltage capability • High gain bandwidth product • Good thermal stability • Gold metallization ensures

文件:49.34 Kbytes 页数:7 Pages

PHI

PHI

PHI

BFG31

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件:9.37507 Mbytes 页数:130 Pages

恩XP

恩XP

BFG310

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件:73.69 Kbytes 页数:12 Pages

PHI

PHI

PHI

BFG310W

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件:75.97 Kbytes 页数:12 Pages

PHI

PHI

PHI

BFG310W

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability Applications  Intended for Radio Frequency (RF) fro

文件:168.74 Kbytes 页数:13 Pages

恩XP

恩XP

BFG310W/XR

丝印:A7;Package:SOT343R;NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability Applications  Intended for Radio Frequency (RF) fro

文件:168.74 Kbytes 页数:13 Pages

恩XP

恩XP

BFG310W/XR

丝印:A7*;Package:SOT-343R;NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件:75.97 Kbytes 页数:12 Pages

PHI

PHI

PHI

BFG310WSLASHXR

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件:75.97 Kbytes 页数:12 Pages

PHI

PHI

PHI

BFG310WSLASHXR

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability Applications  Intended for Radio Frequency (RF) fro

文件:168.74 Kbytes 页数:13 Pages

恩XP

恩XP

BFG310W-XR

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件:9.37507 Mbytes 页数:130 Pages

恩XP

恩XP

晶体管资料

  • 型号:

    BFG31

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-PNP

  • 性质:

    超高频/特高频 (UHF)_宽频带放大 (A)

  • 封装形式:

    贴片封装

  • 极限工作电压:

    20V

  • 最大电流允许值:

    0.1A

  • 最大工作频率:

    5GHZ

  • 引脚数:

    3

  • 可代换的型号:

    BFG55,

  • 最大耗散功率:

  • 放大倍数:

  • 图片代号:

    H-99

  • vtest:

    20

  • htest:

    5000000000

  • atest:

    0.1

  • wtest:

    0

技术参数

  • 功能描述:

    TRANSISTOR

供应商型号品牌批号封装库存备注价格
恩XP
24+
标准封装
7295
全新原装正品/价格优惠/质量保障
询价
恩XP
12+
SOT223
15000
全新原装,绝对正品,公司现货供应。
询价
PHI
24+/25+
SOT223
950
原装正品现货库存价优
询价
恩XP
24+
SOT-223
8040
新进库存/原装
询价
恩XP
1708+
SOT-223
7500
只做原装进口,假一罚十
询价
恩XP
17+
SOT-223
9888
原装现货QQ:547425301手机17621633780杨小姐
询价
PHI
25+
SOT223
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
恩XP
24+
SOT-223
80000
代理进口原装现货假一赔十
询价
恩XP
23+
SOT-223
11846
一级代理商现货批发,原装正品,假一罚十
询价
PHI
2018+
DIP8
26976
代理原装现货/特价热卖!
询价
更多BFG31供应商 更新时间2026-4-18 23:00:00