NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件：78.43 Kbytes 页数：12 Pages

PHI

PHI

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件：78.43 Kbytes 页数：12 Pages

PHI

PHI

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件：78.43 Kbytes 页数：12 Pages

PHI

PHI

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件：85.33 Kbytes 页数：12 Pages

PHI

PHI

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability Applications  Intended for Radio Frequency (RF) fro

文件：178.93 Kbytes 页数：13 Pages

恩XP

丝印：A8；Package：SOT343R；NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability Applications  Intended for Radio Frequency (RF) fro

文件：178.93 Kbytes 页数：13 Pages

恩XP

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件：85.33 Kbytes 页数：12 Pages

PHI

PHI

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件：85.33 Kbytes 页数：12 Pages

PHI

PHI

丝印：A8；Package：SOT343R；NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability Applications  Intended for Radio Frequency (RF) fro

文件：178.93 Kbytes 页数：13 Pages

恩XP

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件：85.33 Kbytes 页数：12 Pages

PHI

PHI