BFG325WSLASHXR中文资料飞利浦数据手册PDF规格书

General description

NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.

特性 Features

■ High power gain

■ Low noise figure

■ High transition frequency

■ Gold metallization ensures excellent reliability

Applications

■ Intended for Radio Frequency (RF) front end applications in the GHz range, such as:

◆ analog and digital cellular telephones

◆ cordless telephones (Cordless Telephone (CT), Personal Communication

Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)

◆ radar detectors

◆ pagers

◆ Satellite Antenna TeleVision (SATV) tuners