NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件：75.97 Kbytes 页数：12 Pages

PHI

PHI

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability Applications  Intended for Radio Frequency (RF) fro

文件：168.74 Kbytes 页数：13 Pages

恩XP

丝印：A7；Package：SOT343R；NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability Applications  Intended for Radio Frequency (RF) fro

文件：168.74 Kbytes 页数：13 Pages

恩XP

丝印：A7*；Package：SOT-343R；NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件：75.97 Kbytes 页数：12 Pages

PHI

PHI

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件：75.97 Kbytes 页数：12 Pages

PHI

PHI

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability Applications  Intended for Radio Frequency (RF) fro

文件：168.74 Kbytes 页数：13 Pages

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RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

NPN 14 GHz wideband transistor

文件：82.64 Kbytes 页数：12 Pages

JMNIC

锦美电子

NPN 14 GHz wideband transistor

文件：82.64 Kbytes 页数：12 Pages

JMNIC

锦美电子

NPN 14 GHz宽频带晶体管

NPN硅平面外延晶体管，采用4针双射极SOT343R塑料封装。 金属化镀金确保极佳的可靠性\n高功率增益\n高传送频率\n低噪声;

恩XP