NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

文件：100.99 Kbytes 页数：12 Pages

PHI

飞利浦

NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

文件：289.38 Kbytes 页数：12 Pages

恩XP

丝印：-MU；Package：SOT-143B；NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

文件：289.38 Kbytes 页数：12 Pages

恩XP

丝印：-MU；Package：SOT-143B；NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

文件：100.99 Kbytes 页数：12 Pages

PHI

飞利浦

NPN 5 GHz wideband transistor

FEATURES · Low current consumption (100 mA to 1 mA) · Low noise figure · Gold metallization ensures excellent reliability. APPLICATIONS · RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz. DESCRIPTION NPN silicon wideband transi

文件：288.83 Kbytes 页数：12 Pages

恩XP

NPN 5 GHz wideband transistor

FEATURES · Low current consumption (100 mA to 1 mA) · Low noise figure · Gold metallization ensures excellent reliability. APPLICATIONS · RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz. DESCRIPTION NPN silicon wideband transi

文件：288.83 Kbytes 页数：12 Pages

恩XP

丝印：-MU；Package：SOT-143B；NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

文件：289.38 Kbytes 页数：12 Pages

恩XP

NPN 5 GHz wideband transistor

FEATURES · Low current consumption (100 mA to 1 mA) · Low noise figure · Gold metallization ensures excellent reliability. APPLICATIONS · RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz. DESCRIPTION NPN silicon wideband transi

文件：288.83 Kbytes 页数：12 Pages

恩XP

丝印：-MU；Package：SOT-143B；NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

文件：100.99 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：N6；Package：SOT-343N；NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in UHF low power amplifiers,

文件：143.08 Kbytes 页数：16 Pages

PHI

飞利浦