丝印：N6；Package：SOT-343N；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：V1；Package：SOT-343N；NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in UHF low power amplifiers,

文件：143.08 Kbytes 页数：16 Pages

PHI

PHI

丝印：V1；Package：SOT-343N；NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in UHF low power amplifiers,

文件：143.08 Kbytes 页数：16 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

文件：100.99 Kbytes 页数：12 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

NPN 5 GHz wideband transistor

文件：105.18 Kbytes 页数：12 Pages

JMNIC

锦美电子

NPN 5 GHz wideband transistor

文件：105.18 Kbytes 页数：12 Pages

JMNIC

锦美电子

NPN 5 GHz宽频带晶体管

NPN硅宽带晶体管，采用四引脚双射极SOT143B塑料封装（交叉射极）。 金属化镀金确保极佳的可靠性\n低电流消耗（100μA至1 mA）\n低噪声;

恩XP

NPN 5 GHz wideband transistor

恩XP