丝印：N6；Package：SOT-343N；NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in UHF low power amplifiers,

文件：143.08 Kbytes 页数：16 Pages

PHI

PHI

丝印：N6；Package：SOT-343N；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：N6；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-power voltage regulator diodes encapsulated in a very small SOD323 (SC-76) plastic SMD package. The diodes are available in the normalized E24 ±2 (BZX384-B) and approx. ±5 (BZX384-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V.

文件：73.09 Kbytes 页数：11 Pages

PHI

PHI

丝印：N6；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-power voltage regulator diodes encapsulated in a very small SOD323 (SC-76) plastic SMD package. The diodes are available in the normalized E24 ±2 (BZX384-B) and approx. ±5 (BZX384-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V.

文件：690.77 Kbytes 页数：11 Pages

恩XP

丝印：N6；Package：6LdμTDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mA Dual LDO with Low Noise, High PSRR, and Low IQ ISL9016 is a high performance dual LDO capable of providing up to 150mA current on each channel. It features a low standby current and very high PSRR and is stable with output capacitance of 1µF to 4.7µF with an ESR of up to 200mΩ. Features •

文件：558.84 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：N6；Package：DFN0603；Transient Voltage Suppressors

文件：193.6 Kbytes 页数：3 Pages

SEMTECH_ELEC

先之科半导体

丝印：N6；Package：MAC08A；UHS Dual 2-Input NAND Gate

文件：563.74 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：N6；Package：TUMD2M；Zener Diode

文件：702.33 Kbytes 页数：7 Pages

ROHM

罗姆

丝印：N6；Package：SOD-323HE；Zener Diode

文件：2.32468 Mbytes 页数：10 Pages

ROHM

罗姆

丝印：N6；Package：SOD-323HE；Zener Diode

文件：2.26735 Mbytes 页数：10 Pages

ROHM

罗姆