N6

型号：BFG25AW；Package：SOT-343N；NPN 5 GHz wideband transistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Lowcurrentconsumption(100µAto1mA) •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS WidebandapplicationsinUHFlowpoweramplifiers,

PHI

N6

型号：BFG25AW；Package：SOT-343N；RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

恩XP

N6

型号：BZX384-B56；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-powervoltageregulatordiodesencapsulatedinaverysmallSOD323(SC-76)plasticSMDpackage. ThediodesareavailableinthenormalizedE24±2(BZX384-B)andapprox.±5(BZX384-C)tolerancerange.Theseriesconsistsof37typeswithnominalworkingvoltagesfrom2.4to75V.

PHI

N6

型号：BZX384-B56；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-powervoltageregulatordiodesencapsulatedinaverysmallSOD323(SC-76)plasticSMDpackage. ThediodesareavailableinthenormalizedE24±2(BZX384-B)andapprox.±5(BZX384-C)tolerancerange.Theseriesconsistsof37typeswithnominalworkingvoltagesfrom2.4to75V.

恩XP

N6

型号：BZX384-B56；Package：SOD323；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

N6

型号：BZX384-B56-Q；Package：SC-76；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

N6

型号：DMN2013UFDEQ-13；Package：U-DFN2020-6；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features 0.6mmProfile–IdealforLowProfileApplications PCBFootprintof4mm2 LowGateThresholdVoltage ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN2013UFDEQissuitableforautomotive

N6

型号：DMN2013UFDEQ-7；Package：U-DFN2020-6；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features 0.6mmProfile–IdealforLowProfileApplications PCBFootprintof4mm2 LowGateThresholdVoltage ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN2013UFDEQissuitableforautomotive

N6

型号：ESD3.3V88D-2C；Package：DFN1006P3；Transient Voltage Suppressors for ESD Protection

Features 42WattsPeakPulsePowerperLine(tp=8/20μs) ProtectstwoBidirectionalI/Olines Lowclampingvoltage Workingvoltages:3.3V Lowleakagecurrent IEC61000-4-2(ESD)±15kV(airdischarge) ±8kV(contactdischarge) Applications CellPhoneHandsetsandAccessories Microprocessor

N6

型号：ISL9016IRUWGZ-T；Package：6LdμTDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mADualLDOwithLowNoise,HighPSRR,andLowIQ ISL9016isahighperformancedualLDOcapableofprovidingupto150mAcurrentoneachchannel.ItfeaturesalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto4.7µFwithanESRofupto200mΩ. Features •