丝印：N65；Package：SOT-23；NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTB) • Built-In Biasing Resistors, R1, R2 • Lead, Halogen and Antimony Free, RoHS Compliant • Green Device (Notes 2 and 3)

文件：79.88 Kbytes 页数：4 Pages

DIODES

美台半导体

N-channel MOSFET 650V, 5.5A, 2.1

Description The N6504NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS (on) = 2.1 MAX. (VGS = 10 V, ID = 2.75 A)  Low input capacitance Ciss = 950pF TYP. (VDS = 10V, VGS = 0 V)  High current ID(DC) = ±5.5

文件：303.85 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-channel MOSFET 650V, 5.5A, 2.1

Description The N6504NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS (on) = 2.1 MAX. (VGS = 10 V, ID = 2.75 A)  Low input capacitance Ciss = 950pF TYP. (VDS = 10V, VGS = 0 V)  High current ID(DC) = ±5.5

文件：303.85 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-channel MOSFET 650V, 7.5A, 1.3

Description The N6506NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS (on) = 1.3 MAX. (VGS = 10 V, ID = 3.75 A)  Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V)  High current ID(DC) = ±7.

文件：297.45 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-channel MOSFET 650V, 7.5A, 1.3

Description The N6506NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS (on) = 1.3 MAX. (VGS = 10 V, ID = 3.75 A)  Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V)  High current ID(DC) = ±7.

文件：297.45 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-channel MOSFET 650V, 9.5A, 0.85

Description The N6508NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS (on) = 0.85 MAX. (VGS = 10 V, ID = 4.75 A)  Low input capacitance Ciss = 2160pF TYP. (VDS = 10V, VGS = 0 V)  High current ID(DC) = ±9

文件：448.96 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-channel MOSFET 650V, 9.5A, 0.85

Description The N6508NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS (on) = 0.85 MAX. (VGS = 10 V, ID = 4.75 A)  Low input capacitance Ciss = 2160pF TYP. (VDS = 10V, VGS = 0 V)  High current ID(DC) = ±9

文件：448.96 Kbytes 页数：8 Pages

RENESAS

瑞萨

N PANEL RECEPT. JACK

文件：170.08 Kbytes 页数：1 Pages

AMPHENOL

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