N-channel MOSFET 650V, 7.5A, 1.3

Description The N6506NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS (on) = 1.3 MAX. (VGS = 10 V, ID = 3.75 A)  Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V)  High current ID(DC) = ±7.

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N-channel MOSFET 650V, 7.5A, 1.3

Description The N6506NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS (on) = 1.3 MAX. (VGS = 10 V, ID = 3.75 A)  Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V)  High current ID(DC) = ±7.

文件：297.45 Kbytes 页数：8 Pages

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NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS

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LASER DIODE

1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 622 Mb/s, 1.25 Gb/s DESCRIPTION The NX6506 Series is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. APPLICATIONS • STM-1, STM-4, ITU-T recommendations • FTTH PON (Fiber To The Ho

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LASER DIODE

1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 622 Mb/s, 1.25 Gb/s DESCRIPTION The NX6506 Series is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. APPLICATIONS • STM-1, STM-4, ITU-T recommendations • FTTH PON (Fiber To The Ho

文件：247.82 Kbytes 页数：9 Pages

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