N-channel MOSFET 650V, 9.5A, 0.85

Description The N6508NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS (on) = 0.85 MAX. (VGS = 10 V, ID = 4.75 A)  Low input capacitance Ciss = 2160pF TYP. (VDS = 10V, VGS = 0 V)  High current ID(DC) = ±9

文件：448.96 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-channel MOSFET 650V, 9.5A, 0.85

Description The N6508NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS (on) = 0.85 MAX. (VGS = 10 V, ID = 4.75 A)  Low input capacitance Ciss = 2160pF TYP. (VDS = 10V, VGS = 0 V)  High current ID(DC) = ±9

文件：448.96 Kbytes 页数：8 Pages

RENESAS

瑞萨

Integrated Circuit CMOS, 1K Static RAM (SRAM)

Description: The NTE6508 is a 1024 x 1 fully static CMOS RAM in a 16–Lead DIP type package fabricated using self–aligned silicon gate technology. Synchronous circuit design techniques are employed to acheive high performance and low power operation. On chip latches are provided for address allowi

文件：37.57 Kbytes 页数：4 Pages

NTE

NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS

文件：332.22 Kbytes 页数：4 Pages

CEL

LASER DIODE

1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES •

文件：258.43 Kbytes 页数：9 Pages

RENESAS

瑞萨