Integrated Circuit CMOS, 1K Static RAM (SRAM)

Description: The NTE6508 is a 1024 x 1 fully static CMOS RAM in a 16–Lead DIP type package fabricated using self–aligned silicon gate technology. Synchronous circuit design techniques are employed to acheive high performance and low power operation. On chip latches are provided for address allowi

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NTE

Integrated Circuit CMOS, 1K Static RAM (SRAM)

NTE

NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS

文件：332.22 Kbytes 页数：4 Pages

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LASER DIODE

1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES •

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RENESAS

瑞萨

NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS

文件：332.22 Kbytes 页数：4 Pages

CEL