Integrated Circuit 128 x 8-Bit Static Random Access Memory (SRAM)

Description: The NTE6810 is a byte–orgainzed memory in a 24–Lead DIP type package designed for use in bus–organized systems. It is fabricated with N–channel silicon–gate technology. For ease of use, this device operates from a single power supply, has compatibility with TTL and DTL, and needs no

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NTE

Integrated Circuit 128 x 8-Bit Static Random Access Memory (SRAM)

NTE

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