丝印：N72；Package：SOT-143；NPN 2 GHz RF power transistor

DESCRIPTION NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS •

文件：79.92 Kbytes 页数：12 Pages

PHI

PHI

丝印：N72；Package：SOT-23；NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTB) • Built-In Biasing Resistors, R1, R2 • Lead, Halogen and Antimony Free, RoHS Compliant • Green Device (Notes 2 and 3)

文件：79.88 Kbytes 页数：4 Pages

DIODES

美台半导体

EB-CCD TV SCAN RATE TYPE : N7640, SLOW SCAN TYPE : N7220

OVERVIEW The EB-CCD is an absolutely new high-sensitivity imaging device that employs the “Electron Bombardment (EB)” effect for image intensification. The EB-CCD basically consists of a photocathode and a CCD chip arranged in parallel in a vacuum tube. An optical image is converted at the photoc

文件：334.7 Kbytes 页数：4 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Ferrites and accessories

文件：270.27 Kbytes 页数：7 Pages

EPCOS

爱普科斯

NPN medium power transistors

文件：216.1 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体