丝印：N72；Package：SOT-143；NPN 2 GHz RF power transistor

DESCRIPTION NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS •

文件：79.92 Kbytes 页数：12 Pages

PHI

PHI

丝印：N73；Package：SOT-143；NPN 2 GHz RF power transistor

DESCRIPTION NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS •

文件：79.92 Kbytes 页数：12 Pages

PHI

PHI

丝印：N73；Package：SOT-143；NPN 2 GHz RF power transistor

DESCRIPTION NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS •

文件：79.92 Kbytes 页数：12 Pages

PHI

PHI

NPN 2 GHz power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability • Linear and non-l

文件：98.03 Kbytes 页数：12 Pages

PHI

PHI

丝印：S4；Package：SOT-343；NPN 2 GHz power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability • Linear and non-l

文件：98.03 Kbytes 页数：12 Pages

PHI

PHI

丝印：S4；Package：SOT-343；NPN 2 GHz power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability • Linear and non-l

文件：98.03 Kbytes 页数：12 Pages

PHI

PHI

NPN 2 GHz RF power transistor

恩XP