NPN 7 GHz WIDEBAND TRANSISTOR

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High voltage fast-switching NPN Power Transistor

Description The devices are manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level

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STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

文件：322.59 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Breakdown Voltage : V(BR)CEO = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 0.7A APPLICATIONS ·Designed for electronic lamp ballast circuits switch-mode power supplies applications.

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ISC

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