NPN 6 GHz wideband transistors

DESCRIPTION NPN transistor in a 4-pin, dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the UHF and microwave range.

文件：133.03 Kbytes 页数：16 Pages

PHI

飞利浦

Silicon NPN Planar RF Transistor

Features • High power gain • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications   RF amplifier up to GHz range.  

文件：64.41 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

NPN 6 GHz wideband transistors

DESCRIPTION NPN transistor in a 4-pin, dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the UHF and microwave range.

文件：286.11 Kbytes 页数：13 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Silicon NPN Planar RF Transistor

文件：103.13 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

NPN 6 GHz wideband transistors

DESCRIPTION NPN transistor in a 4-pin, dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the UHF and microwave range.

文件：286.11 Kbytes 页数：13 Pages

恩XP

NPN 6 GHz wideband transistors

DESCRIPTION NPN transistor in a 4-pin, dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the UHF and microwave range.

文件：133.03 Kbytes 页数：16 Pages

PHI

飞利浦

NPN 6 GHz wideband transistors

DESCRIPTION NPN transistor in a 4-pin, dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the UHF and microwave range.

文件：133.03 Kbytes 页数：16 Pages

PHI

飞利浦

NPN 6 GHz wideband transistors

DESCRIPTION NPN transistor in a 4-pin, dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the UHF and microwave range.

文件：286.11 Kbytes 页数：13 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP