| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PNP 5 GHz wideband transistor DESCRIPTION PNPplanarepitaxialtransistormountedinaplasticSOT223envelope. Itisintendedforwidebandamplifierapplications. NPNcomplementistheBFG97. FEATURES •Highoutputvoltagecapability •Highgainbandwidthproduct •Goodthermalstability •Goldmetallizationensures | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN 14 GHz wideband transistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 14 GHz wideband transistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 14 GHz wideband transistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features Highpowergain Lownoisefigure Hightransitionfrequency Goldmetallizationensuresexcellentreliability Applications IntendedforRadioFrequency(RF)fro | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN 14 GHz wideband transistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 14 GHz wideband transistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features Highpowergain Lownoisefigure Hightransitionfrequency Goldmetallizationensuresexcellentreliability Applications IntendedforRadioFrequency(RF)fro | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN 14 GHz wideband transistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 14 GHz wideband transistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN 14 GHz wideband transistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 14 GHz wideband transistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 14 GHz wideband transistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 14 GHz wideband transistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features Highpowergain Lownoisefigure Hightransitionfrequency Goldmetallizationensuresexcellentreliability Applications IntendedforRadioFrequency(RF)fro | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN 14 GHz wideband transistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 14 GHz wideband transistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features Highpowergain Lownoisefigure Hightransitionfrequency Goldmetallizationensuresexcellentreliability Applications IntendedforRadioFrequency(RF)fro | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN 14 GHz wideband transistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN 14 GHz wideband transistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-PNP
- 性质：
超高频/特高频 （UHF）_宽频带放大 （A）
- 封装形式：
贴片封装
- 极限工作电压：
20V
- 最大电流允许值：
0.1A
- 最大工作频率：
5GHZ
- 引脚数：
3
- 可代换的型号：
BFG55,
- 最大耗散功率：
- 放大倍数：
- 图片代号：
H-99
- vtest：
20
- htest：
5000000000
- atest：
.1
- wtest：
0
详细参数
- 型号：
BFG3
- 功能描述：
射频双极小信号晶体管 PNP 10V 100mA 14GHZ
- RoHS：
否
- 制造商：
NXP Semiconductors
- 配置：
Single
- 晶体管极性：
NPN
- 最大工作频率：
7000 MHz 集电极—发射极最大电压
- VCEO：
15 V 发射极 - 基极电压
- VEBO：
2 V
- 集电极连续电流：
0.15 A
- 功率耗散：
1000 mW 直流集电极/Base Gain hfe
- 最大工作温度：
+ 150 C
- 封装/箱体：
SOT-223
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NXP(恩智浦) |
23+ |
标准封装 |
7295 |
全新原装正品/价格优惠/质量保障 |
询价 | ||
PHILIPS/NXP |
SOT223 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
NXP/恩智浦 |
2024+实力库存 |
SOT-223 |
568 |
只做原厂渠道 可追溯货源 |
询价 | ||
NXP/恩智浦 |
SOT223 |
7906200 |
询价 | ||||
NXP |
2017+ |
SOT-223 |
25899 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 | ||
NXP |
12+ |
SOT223 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
PHI |
0629+ |
SOT223 |
950 |
原装正品长期供货，如假包赔包换 徐小姐13714450367 |
询价 | ||
PHILIPS |
23+ |
SOT223 |
12300 |
询价 | |||
NXP恩智浦/PHILIPS飞利浦 |
2008++ |
SOT-223 |
8040 |
新进库存/原装 |
询价 | ||
NXP |
1708+ |
SOT-223 |
7500 |
只做原装进口,假一罚十 |
询价 |
