| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPN 14 GHz wideband transistor General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e 文件：85.33 Kbytes 页数：12 Pages | PHI PHI | PHI | ||
丝印：A8；Package：SOT343R；NPN 14 GHz wideband transistor General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability Applications Intended for Radio Frequency (RF) fro 文件：178.93 Kbytes 页数：13 Pages | 恩XP | 恩XP | ||
RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 页数：130 Pages | 恩XP | 恩XP | ||
NPN 14 GHz wideband transistor General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e 文件：85.33 Kbytes 页数：12 Pages | PHI PHI | PHI | ||
NPN 14 GHz wideband transistor General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e 文件：85.33 Kbytes 页数：12 Pages | PHI PHI | PHI | ||
RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 页数：130 Pages | 恩XP | 恩XP | ||
RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 页数：130 Pages | 恩XP | 恩XP | ||
NPN 4 GHz wideband transistor DESCRIPTION NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities. 文件：91.67 Kbytes 页数：16 Pages | PHI PHI | PHI | ||
PNP 5 GHz wideband transistor 文件：228.03 Kbytes 页数：9 Pages | PHI PHI | PHI | ||
NPN 14 GHz wideband transistor 文件：81.37 Kbytes 页数：12 Pages | JMNIC 锦美电子 | JMNIC |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
甚高频 （VHF）_超高频/特高频 （UHF）_宽频带放大
- 封装形式：
贴片封装
- 极限工作电压：
25V
- 最大电流允许值：
0.15A
- 最大工作频率：
4GHZ
- 引脚数：
4
- 可代换的型号：
BFG135,
- 最大耗散功率：
- 放大倍数：
- 图片代号：
H-99
- vtest：
25
- htest：
4000000000
- atest：
0.15
- wtest：
0
技术参数
- 功能描述：
TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
SOT223 |
1524 |
原装正品,现货库存,1小时内发货 |
询价 | ||
恩XP |
24+ |
SOT223 |
9750 |
绝对原装现货,价格低,欢迎询购! |
询价 | ||
恩XP |
25+ |
N/A |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
询价 | ||
恩XP |
24+ |
SOT-223 |
6219 |
新进库存/原装 |
询价 | ||
PHI |
24+/25+ |
2986 |
原装正品现货库存价优 |
询价 | |||
恩XP |
12+ |
SOT223 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
PHI |
25+ |
SOT-223 |
355 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
PHI |
24+ |
SOT-223 |
3000 |
原装现货假一罚十 |
询价 | ||
PHI |
25+ |
SOT223 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
询价 | ||
恩XP |
23+ |
SOT-223 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 |
