NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA

文件：99.17 Kbytes 页数：6 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)

• For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: CECC 50 002/259

文件：49.37 Kbytes 页数：6 Pages

SIEMENS

西门子

NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz

文件：48.45 Kbytes 页数：6 Pages

SIEMENS

西门子

Silicon NPN RF Transistor

DESCRIPTION • Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz • High Gain ︱ S21e︱ 2 = 13.5 dB TYP. @VCE= 8 V,IC = 30 mA,f = 900 MHz APPLICATIONS • Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers.

文件：73.92 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz F = 1.3 dB at 900 MHz

文件：59.73 Kbytes 页数：6 Pages

INFINEON

英飞凌

Low Noise Figure

DESCRIPTION • Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz • High Gain ︱ S21e︱ 2 = 13.5 dB TYP. @VCE= 8 V,IC = 30 mA,f = 900 MHz APPLICATIONS • Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers.

文件：185.15 Kbytes 页数：5 Pages

ISC

无锡固电

PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)

• For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA

文件：65.45 Kbytes 页数：7 Pages

SIEMENS

西门子

NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)

NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz

文件：48.87 Kbytes 页数：6 Pages

SIEMENS

西门子

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA • Power amplifier for DECT and PCN Systems • fT = 7.5 GHz F = 1.5 dB at 900 GHz

文件：60.07 Kbytes 页数：6 Pages

INFINEON

英飞凌

NPN 7 GHz wideband transistor

DESCRIPTION The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems. FEATURES • High power gain • Low nois

文件：93.07 Kbytes 页数：13 Pages

PHI

PHI