丝印：-MU；Package：SOT-143B；NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

文件：100.99 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：-MU；Package：SOT-143B；NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

文件：289.38 Kbytes 页数：12 Pages

恩XP

丝印：-MU；Package：SOT-143B；NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

文件：100.99 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：-MU；Package：SOT-143B；NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

文件：289.38 Kbytes 页数：12 Pages

恩XP