DMN2710UDW-13

Marking：BD1；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ComplementaryPairMOSFET Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntim

DMN2710UDW-7

Marking：BD1；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ComplementaryPairMOSFET Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntim

BD135

Marking：BD135；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES HighCurrent ComplementToBD136,BD138AndBD140

BD135-TU

Marking：BD135；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES HighCurrent ComplementToBD136,BD138AndBD140

BD136

Marking：BD136；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES HighCurrent ComplementToBD135,BD137AndBD139

BD136-TU

Marking：BD136；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES HighCurrent ComplementToBD135,BD137AndBD139

BD137

Marking：BD137；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES HighCurrent ComplementToBD136,BD138AndBD140

BD137-TU

Marking：BD137；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES HighCurrent ComplementToBD136,BD138AndBD140

BD138

Marking：BD138；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES HighCurrent ComplementToBD135,BD137AndBD139

BD138-TU

Marking：BD138；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES HighCurrent ComplementToBD135,BD137AndBD139