丝印：BD234；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD233/BD235/BD237 respectively

文件：1.30158 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BD234；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD233/BD235/BD237 respectively

文件：1.30158 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BD234；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD233/BD235/BD237 respectively

文件：1.30158 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BD234；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD233/BD235/BD237 respectively

文件：1.30158 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complement to BD233/BD235/BD237 respectively

文件：1.52839 Mbytes 页数：4 Pages

JIANGSU

长电科技

Silicon PNP Power Transistor

DESCRIPTION • DC Current Gain- : hFE=40(Min)@lc=-0.15A • Complement to Type BD233/235/237 APPLICATIONS • Designed for use in 5-10 watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

文件：191.85 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON PNP TRANSISTOR

DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. ■ SGS-THOMSON PREFERRED SALESTYPE ■ PNP TRANSISTOR

文件：62.86 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

Medium Power Linear and Switching

Medium Power Linear and Switching Applications • Complement to BD 233/235/237 respectively

文件：37.69 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD233/235 /237 APPLICATIONS • For medium power linear and switching applications

文件：101.96 Kbytes 页数：3 Pages

SAVANTIC

Plastic Medium Power Bipolar Transistors

Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • Epoxy Meets UL 94 V0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; >

文件：68.89 Kbytes 页数：4 Pages

ONSEMI

安森美半导体